Theoretical simulation of extreme UV radiation source for lithography

K. Fujima, K. Nishihara, T. Kawamura, H. Furukawa, T. Kagawa, F. Koike, R. More, M. Murakami, T. Nishikawa, A. Sasaki, A. Sunahara, V. Zhakhovskii, T. Fujimoto, H. Tanuma

研究成果査読

3 被引用数 (Scopus)

抄録

A possible design window for extreme ultraviolet (EUV) radiation source has been introduced, which is needed for its realistic use for next generation lithography. For this goal, we have prepared a set of numerical simulation codes to estimate the conversion efficiency from laser energy to radiation energy with a wavelength of 13.5 nm with 2% bandwidth, which includes atomic structure, opacity and emissibity and hydro dynamics codes. The simulation explains well the observed conversion efficiency dependence of incident power using GEKKO XII laser system as well as spectral shapes. It is found that the conversion efficiency into 13.5 nm at 2% bandwidth has its maximum of a few percent at the laser intensity 1-2 × 10 11 W/cm 2.

本文言語English
ページ(範囲)405-412
ページ数8
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
5374
PART 1
DOI
出版ステータスPublished - 2004
イベントEmerging Lithographic Technologies VIII - Santa Clara, CA
継続期間: 2月 24 20042月 26 2004

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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