Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier

Kiyoto Takahata; Yoshifumi Muramoto; Hideki Fukano; Kazutoshi Kato; Atsuo Kozen; Shunji Kimura; Yuhki Imai; Yutaka Miyamoto; Osaake Nakajima; Yutaka Matsuoka

doi:10.1109/2944.826870

Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier

Kiyoto Takahata, Yoshifumi Muramoto, Hideki Fukano, Kazutoshi Kato, Atsuo Kozen, Shunji Kimura, Yuhki Imai, Yutaka Miyamoto, Osaake Nakajima, Yutaka Matsuoka

研究成果 › 査読

24 被引用数 (Scopus)

抄録

A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband amplifier consisting of high-electron mobility transistors (HEMT's) were monolithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The distributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5-μm gate-length HEMT's have modest cutoff frequencies f_T/f_max of 47/100 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46.5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-μm wavelength. The module achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear eye-opening at 50 Gb/s.

本文言語	English
ページ（範囲）	31-37
ページ数	7
ジャーナル	IEEE Journal on Selected Topics in Quantum Electronics
巻	6
号	1
DOI	https://doi.org/10.1109/2944.826870
出版ステータス	Published - 1月 2000
外部発表	はい

ASJC Scopus subject areas

原子分子物理学および光学
電子工学および電気工学

文献へのアクセス

10.1109/2944.826870

他のファイルとリンク

引用スタイル

@article{5c5ed46f0159478197a67a15b8c23fa0,

title = "Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier",

abstract = "A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband amplifier consisting of high-electron mobility transistors (HEMT's) were monolithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The distributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5-μm gate-length HEMT's have modest cutoff frequencies fT/fmax of 47/100 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46.5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-μm wavelength. The module achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear eye-opening at 50 Gb/s.",

author = "Kiyoto Takahata and Yoshifumi Muramoto and Hideki Fukano and Kazutoshi Kato and Atsuo Kozen and Shunji Kimura and Yuhki Imai and Yutaka Miyamoto and Osaake Nakajima and Yutaka Matsuoka",

year = "2000",

month = jan,

doi = "10.1109/2944.826870",

language = "English",

volume = "6",

pages = "31--37",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier

AU - Takahata, Kiyoto

AU - Muramoto, Yoshifumi

AU - Fukano, Hideki

AU - Kato, Kazutoshi

AU - Kozen, Atsuo

AU - Kimura, Shunji

AU - Imai, Yuhki

AU - Miyamoto, Yutaka

AU - Nakajima, Osaake

AU - Matsuoka, Yutaka

PY - 2000/1

Y1 - 2000/1

N2 - A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband amplifier consisting of high-electron mobility transistors (HEMT's) were monolithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The distributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5-μm gate-length HEMT's have modest cutoff frequencies fT/fmax of 47/100 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46.5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-μm wavelength. The module achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear eye-opening at 50 Gb/s.

AB - A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband amplifier consisting of high-electron mobility transistors (HEMT's) were monolithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The distributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5-μm gate-length HEMT's have modest cutoff frequencies fT/fmax of 47/100 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46.5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-μm wavelength. The module achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear eye-opening at 50 Gb/s.

UR - http://www.scopus.com/inward/record.url?scp=0033873266&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033873266&partnerID=8YFLogxK

U2 - 10.1109/2944.826870

DO - 10.1109/2944.826870

M3 - Article

AN - SCOPUS:0033873266

SN - 1077-260X

VL - 6

SP - 31

EP - 37

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

IS - 1

ER -

Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル